PART |
Description |
Maker |
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
FQD5N60CTM |
600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
STGB7NB60KD STGD7NB60K STGP7NB60K STGP7NB60KDFP ST |
N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH?/a> IGBT N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT (STGD7NB60K / STGP7NB60K / STGB7NB60KD) N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH IGBT N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESHIGBT N沟道A - 600V IGBT的TO-220/FP/DPAK/D2PAK PowerMESH
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
FQPF10N60C FQP10N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
SSW2N60B 2N60B SSI2N60B SSW2N60BTM |
600V N-Channel B-FET / Substitute of SSW2N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
STF9NK60ZD STB9NK60ZD STB9NK60ZDT4 STP9NK60ZD |
N-CHANNEL 600V - 0.85 OHM - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET N-CHANNEL 600V - 0.85OHM - 7A TO-220/TO-220FP/DPAK SUPERFREDMESH MOSFET From old datasheet system N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展|7A一(c)|63AB 14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp. Fairchild Semiconductor
|
STD1NC60 STD1NC60T4 STD1NC60-1 |
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET N沟道600V 7ohm - 1.4A的DPAK /像是iPak PowerMesh第二MOSFET的⑩ N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh?II MOSFET N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMeshII MOSFET N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics
|
STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 CONNECTOR ACCESSORY N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
FCH47N60F FCA47N60F109 |
N-Channel SuperFETFRFETMOSFET 600V, 47A, 73m N-Channel SuperFETMOSFET 600V, 47A, 70m
|
Fairchild Semiconductor
|